⚡Electrical Engineering MCQs
Electrical Engineering MCQs
499 MCQs251
The leakage current in a silicon transistor is about_____________ the leakage current in a germanium transistor?
AOne hundredth
BOne tenth
COne thousandth
DOne millionth
252
Class C amplifiers are used as ___________________?
Aamplifiers
BDetectors
CNone of the above
253
A class A power amplifier uses _________________?
ATwo transistors
BThree transistors
COne transistor
DNone of the above
254
The output stage of a multistage amplifier is also called _________________-?
AMixer stage
BPower stage
CDetector stage
DF stage
255
The value of VBE ___________________?
ADepends upon IC to moderate extent
BIs almost independent of IC
CIs strongly dependant on IC
DNone of the above
256
A silicon transistor is biased with base resistor method. If ß=100, VBE =0.7 V, zero signal collector current IC = 1 mA and VCC = 6V , what is the value of the base resistor RB ?
A105 kO
B530 kO
C315 kO
DNone of the above
257
When the temperature changes, the operating point is shifted due to _______________?
AChange in ICBO
BChange in VCC
CChange in the values of circuit resistance
DNone of the above
258
The stabilisation of operating point in potential divider method is provided by_______________?
ARE consideration
BRC consideration
CVCC consideration
DNone of the above
259
In the design of a biasing circuit, the value of collector load RC is determined by__________________?
AVCE consideration
BVBE consideration
CIB consideration
DNone of the above
260
For germanium transistor amplifier, VCE should_______________for faithful amplification?
ABe zero
BBe 0.2 V
CNot fall below 0.7 V
DNone of the above